P-channel Power MOSFET featuring a -100V drain-to-source breakdown voltage and a continuous drain current of 13.2A. This single-element transistor offers a low on-resistance of 125mΩ and a maximum power dissipation of 45W. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 4.8ns and a fall time of 110ns.
PackageTO-220-3
Current Rating-13.2A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF22P10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13.2A |
| Current Rating | -13.2A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 4.8ns |
| DC Rated Voltage | -100V |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF22P10 Datasheet
Download the complete datasheet for Onsemi FQPF22P10 to view detailed technical specifications.
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