P-channel enhancement mode power MOSFET with 100V drain-source voltage and 13.2A continuous drain current. Features a TO-220F package with 3 through-hole pins and a tab, offering a maximum power dissipation of 45000mW. Operates across a wide temperature range from -55°C to 175°C, with a low drain-source on-resistance of 125mOhm at 10V.
PackageTO-220F
MountingThrough Hole
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Technical Specifications
Onsemi FQPF22P10TYDTU technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220F |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.9(Max) |
| Package Height (mm) | 16.07(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 13.2A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 125@10VmOhm |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Typical Gate Charge @ 10V | 40nC |
| Typical Input Capacitance @ Vds | 1170@25VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi FQPF22P10TYDTU Datasheet
Download the complete datasheet for Onsemi FQPF22P10TYDTU to view detailed technical specifications.
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