
N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 14A continuous drain current. This component offers a low 110mΩ drain-source on-resistance and 55W maximum power dissipation. Designed for through-hole mounting in a TO-220F package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 32ns turn-on delay and 120ns fall time.
Onsemi FQPF27N25 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | FRFET™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 250V |
| Weight | 2.27g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF27N25 to view detailed technical specifications.
No datasheet is available for this part.
