N-Channel Power MOSFET featuring 700V drain-source breakdown voltage and 2A continuous drain current. This single-element transistor offers 6.3Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 28W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 70ns fall time and 50ns turn-off delay time.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF2N70 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 6.3R |
| Drain to Source Voltage (Vdss) | 700V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 6.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 700V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF2N70 Datasheet
Download the complete datasheet for Onsemi FQPF2N70 to view detailed technical specifications.
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