N-channel MOSFET featuring 60V drain-source breakdown voltage and 21A continuous drain current. This through-hole component offers a low 40mΩ drain-source resistance (Rds On) and 39W power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with turn-on delay of 10ns and fall time of 40ns. Packaged in a TO-220-3 case, this RoHS compliant device is ideal for power switching applications.
PackageTO-220-3
Current Rating21A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF30N06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 19.5mm |
| Input Capacitance | 945pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF30N06 Datasheet
Download the complete datasheet for Onsemi FQPF30N06 to view detailed technical specifications.
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