N-Channel Power MOSFET, QFET® series, featuring a 100V drain-source breakdown voltage and 18A continuous drain current. This single-element transistor offers a low 52mΩ drain-source on-resistance and a maximum power dissipation of 41W. Packaged in a TO-220F with through-hole mounting, it operates across a wide temperature range from -55°C to 175°C. RoHS compliant and lead-free, this component is ideal for power switching applications.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF33N10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 41W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 100V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF33N10 Datasheet
Download the complete datasheet for Onsemi FQPF33N10 to view detailed technical specifications.
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