
N-channel MOSFET with 200V drain-source breakdown voltage and 17.5A continuous drain current. Features low 75mΩ drain-source on-resistance and 55W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 45ns and fall time of 370ns. Operates across a wide temperature range from -55°C to 150°C.
Onsemi FQPF34N20L technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17.5A |
| Current Rating | 17.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 370ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 19.5mm |
| Input Capacitance | 3.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQPF34N20L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
