N-channel MOSFET featuring 600V drain-source breakdown voltage and 2A continuous drain current. This through-hole component offers 3.6 Ohms Rds On Max and 450pF input capacitance. Designed for a wide operating temperature range from -55°C to 150°C, it has a maximum power dissipation of 34W. The TO-220-3 package is RoHS compliant.
PackageTO-220-3
Current Rating2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF3N60 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 34W |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF3N60 Datasheet
Download the complete datasheet for Onsemi FQPF3N60 to view detailed technical specifications.
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