N-Channel Power MOSFET, 800V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, 4.8 Ohm Drain-Source Resistance. Features include 39W Max Power Dissipation, 150°C Max Operating Temperature, and TO-220F package for through-hole mounting. This single-element MOSFET offers fast switching with turn-on delay of 15ns and fall time of 32ns. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF3N80C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 4.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 705pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 4.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 22.5ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF3N80C Datasheet
Download the complete datasheet for Onsemi FQPF3N80C to view detailed technical specifications.
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