The FQPF3N90_NL is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 43W and a continuous drain current of 2.1A. The device features a drain to source breakdown voltage of 900V and a drain to source resistance of 3.3R. It is suitable for high-power applications and is available in a package quantity of 50.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power43W
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Technical Specifications
Onsemi FQPF3N90_NL technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 3.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 910pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 43W |
| Rds On Max | 4.25R |
| Series | QFET™ |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF3N90_NL Datasheet
Download the complete datasheet for Onsemi FQPF3N90_NL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.