P-channel MOSFET with 200V drain-source breakdown voltage and 2.2A continuous drain current. Features 2.7 Ohm drain-source resistance and 32W maximum power dissipation. Packaged in a TO-220-3 through-hole mount, this component offers fast switching with turn-on delay of 8.5ns and fall time of 25ns. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating-2.2A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF3P20 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | -2.2A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 32W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF3P20 Datasheet
Download the complete datasheet for Onsemi FQPF3P20 to view detailed technical specifications.
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