N-channel MOSFET with 200V drain-source breakdown voltage and 2.8A continuous drain current. Features 1.4 Ohm Rds On, 220pF input capacitance, and 27W power dissipation. Designed for through-hole mounting in a TO-220-3 package, operating from -55°C to 150°C. Includes fast switching characteristics with 7ns turn-on and turn-off delay times, and a 25ns fall time. This RoHS compliant component is lead-free.
PackageTO-220-3
Current Rating2.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF4N20 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | 2.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19.4mm |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 27W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF4N20 Datasheet
Download the complete datasheet for Onsemi FQPF4N20 to view detailed technical specifications.
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