The FQPF4N90CT is a single-element MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 47W and a continuous drain current of 4A. The device is packaged in a TO-220-3 package and is available in a lead-free version. The FQPF4N90CT has an input capacitance of 960pF and a gate-to-source voltage of 30V. It is RoHS compliant and has a turn-off delay time of 40ns and a turn-on delay time of 25ns.
PackageTO-220-3
MountingThrough Hole
Power47W
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Technical Specifications
Onsemi FQPF4N90CT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Rds On Max | 4.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 25ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF4N90CT Datasheet
Download the complete datasheet for Onsemi FQPF4N90CT to view detailed technical specifications.
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