
N-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 31A Continuous Drain Current, 22mΩ Drain-Source On-Resistance. Features a TO-220-3 package, 47W Power Dissipation, and 175°C Max Operating Temperature. Includes 1.54nF Input Capacitance, 65ns Fall Time, 60ns Turn-Off Delay, and 15ns Turn-On Delay. Through-hole mount with a 4V Nominal Gate-Source Threshold Voltage.
Onsemi FQPF50N06 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Dual Supply Voltage | 60V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.19mm |
| Input Capacitance | 1.54nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FQPF50N06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
