N-channel MOSFET featuring 60V drain-source breakdown voltage and 32.6A continuous drain current. This through-hole component offers a low 21mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 47W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with a 20ns turn-on delay and 145ns fall time. Packaged in TO-220-3, this RoHS compliant device is ideal for power switching applications.
PackageTO-220-3
Current Rating32.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF50N06L technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 32.6A |
| Current Rating | 32.6A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF50N06L Datasheet
Download the complete datasheet for Onsemi FQPF50N06L to view detailed technical specifications.
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