
N-Channel MOSFET, 500V Drain to Source Breakdown Voltage, 5A Continuous Drain Current, 1.4 Ohm Rds On Max. Features a TO-220-3 package for through-hole mounting, 38W maximum power dissipation, and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a 12ns turn-on delay and 48ns fall time. Lead-free construction and 625pF input capacitance.
Onsemi FQPF5N50C technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 1.4R |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
| Width | 4.7mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FQPF5N50C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.