N-channel MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 1.55 Ohm drain-source on-resistance and 38W maximum power dissipation. Designed with a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 48ns fall time and 50ns turn-off delay. The device is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQPF5N50CFTU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 1.55R |
| RoHS Compliant | Yes |
| Series | FRFET® |
| Turn-Off Delay Time | 50ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF5N50CFTU Datasheet
Download the complete datasheet for Onsemi FQPF5N50CFTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
