N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 5A continuous drain current. This QFET® series component offers a low 1.4Ω drain-to-source resistance (Rds On Max) and 38W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 12ns turn-on delay and 48ns fall time. The component is RoHS compliant and lead-free.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF5N50CYDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.87mm |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Weight | 2.565g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF5N50CYDTU Datasheet
Download the complete datasheet for Onsemi FQPF5N50CYDTU to view detailed technical specifications.
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