N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 3A continuous drain current. This single element MOSFET offers a maximum drain-source on-resistance of 2.3 Ohms. Designed for through-hole mounting in a TO-220-3 package, it boasts a maximum power dissipation of 51W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 28ns turn-on delay and 50ns fall time.
PackageTO-220-3
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF5N90 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2.3R |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 1.55nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Radiation Hardening | No |
| Rds On Max | 2.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 900V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF5N90 Datasheet
Download the complete datasheet for Onsemi FQPF5N90 to view detailed technical specifications.
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