N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 40A continuous drain current. This TO-220F packaged device offers a low 16mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 56W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 20ns and fall time of 105ns. This RoHS compliant component is designed for through-hole mounting.
PackageTO-220-3
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF65N06 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 60V |
| Dual Supply Voltage | 60V |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.19mm |
| Input Capacitance | 2.41nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 60V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF65N06 Datasheet
Download the complete datasheet for Onsemi FQPF65N06 to view detailed technical specifications.
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