N-Channel Power Field-Effect Transistor featuring a 600V Drain to Source Breakdown Voltage and 5.5A Continuous Drain Current. This TO-220-3 packaged MOSFET offers a low 2 Ohm maximum Drain-Source On-Resistance and 40W maximum power dissipation. Designed for through-hole mounting, it operates across a wide temperature range of -55°C to 150°C with a 45ns fall time and 15ns turn-on delay.
PackageTO-220-3
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF6N60C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 600V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 810pF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| Series | QFET® |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 600V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQPF6N60C Datasheet
Download the complete datasheet for Onsemi FQPF6N60C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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