N-Channel Power Field-Effect Transistor featuring a 600V Drain to Source Breakdown Voltage and 5.5A Continuous Drain Current. This TO-220-3 packaged MOSFET offers a low 2 Ohm maximum Drain-Source On-Resistance and 40W maximum power dissipation. Designed for through-hole mounting, it operates across a wide temperature range of -55°C to 150°C with a 45ns fall time and 15ns turn-on delay.
PackageTO-220-3
Current Rating5.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF6N60C technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Current Rating
5.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
600V
Element Configuration
Single
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Height
9.19mm
Input Capacitance
810pF
Lead Free
Lead Free
Length
10.16mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Rds On Max
2R
Reach SVHC Compliant
No
Series
QFET®
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
15ns
DC Rated Voltage
600V
Weight
2.27g
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FQPF6N60C Datasheet
Download the complete datasheet for Onsemi FQPF6N60C to view detailed technical specifications.
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