N-Channel Power MOSFET, 800V Drain to Source Breakdown Voltage, 5.5A Continuous Drain Current, 2.5 Ohm Rds On. Features TO-220F package for through-hole mounting, 51W max power dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 26ns and fall time of 44ns. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power51W
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Technical Specifications
Onsemi FQPF6N80CT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.31nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 26ns |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF6N80CT Datasheet
Download the complete datasheet for Onsemi FQPF6N80CT to view detailed technical specifications.
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