N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3.3A continuous drain current. This through-hole component offers a low 1.95 Ohm drain-source resistance (Rds On Max) and is housed in a TO-220-3 package. Designed for efficient switching, it exhibits turn-on delay time of 30ns and fall time of 45ns. With a maximum power dissipation of 51W and an operating temperature range of -55°C to 150°C, this RoHS compliant MOSFET is suitable for demanding applications.
PackageTO-220-3
Current Rating3.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF6N80T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.95R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 51W |
| Radiation Hardening | No |
| Rds On Max | 1.95R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF6N80T Datasheet
Download the complete datasheet for Onsemi FQPF6N80T to view detailed technical specifications.
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