N-channel Power MOSFET featuring 900V drain-source breakdown voltage and 6A continuous drain current. This single-element transistor offers a low 2.3 Ohm drain-source on-resistance and is housed in a TO-220-3 package for through-hole mounting. Key switching characteristics include a 35ns turn-on delay and 60ns fall time, with a maximum power dissipation of 56W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power56W
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Technical Specifications
Onsemi FQPF6N90C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.3R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 2.3R |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.19mm |
| Input Capacitance | 1.77nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 56W |
| Rds On Max | 2.3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 35ns |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF6N90C Datasheet
Download the complete datasheet for Onsemi FQPF6N90C to view detailed technical specifications.
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