N-Channel Power MOSFET, QFET® series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 35A. This single-element transistor offers a low drain-source on-resistance of 23mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220F package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 62W. Key switching characteristics include a 30ns turn-on delay and a 160ns fall time.
PackageTO-220-3
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FQPF70N10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23MR |
| Element Configuration | Single |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.19mm |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 62W |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 100V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF70N10 Datasheet
Download the complete datasheet for Onsemi FQPF70N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
