N-Channel Power MOSFET, 650V Drain to Source Breakdown Voltage, 7A Continuous Drain Current, 1.4 Ohm Drain to Source Resistance. Features 52W Max Power Dissipation, TO-220-3 through-hole package, and 1.245nF input capacitance. Operates from -55°C to 150°C with 20ns turn-on delay and 55ns fall time. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power52W
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Technical Specifications
Onsemi FQPF7N65CYDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Element Configuration | Single |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.245nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 20ns |
| Weight | 2.565g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF7N65CYDTU Datasheet
Download the complete datasheet for Onsemi FQPF7N65CYDTU to view detailed technical specifications.
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