P-channel MOSFET with a 100V drain-source breakdown voltage and 5.3A continuous drain current. Features a low 530mΩ drain-to-source resistance (Rds On Max) and a TO-220-3 package for through-hole mounting. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 28W. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 35ns. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating-5.3A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF8P10 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.3A |
| Current Rating | -5.3A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 530mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF8P10 Datasheet
Download the complete datasheet for Onsemi FQPF8P10 to view detailed technical specifications.
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