N-channel Power MOSFET featuring 250V drain-source breakdown voltage and 8.8A continuous drain current. This single element transistor offers a low 430mΩ drain-source resistance (Rds On) and is housed in a TO-220-3 through-hole package. Key switching characteristics include a 15ns turn-on delay and 65ns fall time, with a maximum power dissipation of 38W. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power38W
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Technical Specifications
Onsemi FQPF9N25CYDTU technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 710pF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 430mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 15ns |
| Weight | 2.565g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF9N25CYDTU Datasheet
Download the complete datasheet for Onsemi FQPF9N25CYDTU to view detailed technical specifications.
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