N-Channel Power MOSFET, 500V Drain to Source Breakdown Voltage, 9A Continuous Drain Current, 800mΩ Drain to Source Resistance. Features include 44W Max Power Dissipation, 1.03nF Input Capacitance, and 64ns Fall Time. This single-element transistor is housed in a TO-220-3 package for through-hole mounting. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF9N50C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 93ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF9N50C Datasheet
Download the complete datasheet for Onsemi FQPF9N50C to view detailed technical specifications.
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