N-channel MOSFET with 500V drain-source breakdown voltage and 9A continuous drain current. Features 800mΩ maximum drain-source on-resistance and 44W maximum power dissipation. Packaged in a TO-220-3 through-hole mount configuration, this single element transistor offers fast switching with a 64ns fall time and 93ns turn-off delay. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQPF9N50CT technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 93ns |
| DC Rated Voltage | 500V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF9N50CT Datasheet
Download the complete datasheet for Onsemi FQPF9N50CT to view detailed technical specifications.
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