P-Channel MOSFET featuring a -250V drain-source breakdown voltage and a continuous drain current of -6A. This single-element transistor offers a low drain-source on-resistance of 620mΩ. Designed for through-hole mounting in a TO-263-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. Key switching characteristics include a turn-on delay time of 20ns and a fall time of 65ns.
PackageTO-263-3
Current Rating-6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQPF9P25 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | -6A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 620mR |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.07mm |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 620mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -250V |
| Weight | 2.27g |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQPF9P25 Datasheet
Download the complete datasheet for Onsemi FQPF9P25 to view detailed technical specifications.
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