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Technical Specifications
Onsemi FQS4410TF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 13.5mR |
| RoHS Compliant | No |
| Series | QFET® |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FQS4410TF Datasheet
Download the complete datasheet for Onsemi FQS4410TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.