ONSEMI

FQS4901TF

Datasheet

400V N-Ch MOSFET, 4.2Ω Rds(on), 450mA ID, SOIC N

Onsemi

FQS4901TF

Name: FQS4901TF Onsemi
Brand: Onsemi
SKU: FQS4901TF

400V N-Ch MOSFET, 4.2Ω Rds(on), 450mA ID, SOIC N

N-Channel MOSFET, 400V Drain-Source Breakdown Voltage, 450mA Continuous Drain Current, and 4.2Ω Max Drain-Source On-Resistance. This dual N-Channel MOSFET features a 4V Threshold Voltage, 25V Gate-to-Source Voltage, and 210pF Input Capacitance. Designed for surface mounting in an SOIC N package, it offers a 2W Max Power Dissipation and operates between -55°C and 150°C. The component includes fast switching characteristics with a 5ns Turn-On Delay and 20ns Turn-Off Delay, supplied in a 3000-piece tape and reel.

PackageSOIC N

Current Rating450mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQS4901TF technical specifications.

General

Package/Case	SOIC N
Continuous Drain Current (ID)	450mA
Current Rating	450mA
Drain to Source Breakdown Voltage	400V
Drain to Source Resistance	11.2R
Drain to Source Voltage (Vdss)	400V
Drain-source On Resistance-Max	4.2R
Element Configuration	Dual
Fall Time	35ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	25V
Input Capacitance	210pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	4.2R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	20ns
Turn-On Delay Time	5ns
DC Rated Voltage	400V
Weight	0.2304g