P-Channel MOSFET featuring a -250V drain-source breakdown voltage and a continuous drain current of 550mA. This surface-mount device offers a low Rds(on) of 4 Ohms and a maximum power dissipation of 2.5W. Designed for efficient switching, it exhibits turn-on delay time of 8.5ns and fall time of 25ns. Packaged in a SOT-223 case, this RoHS compliant component is supplied on a 4000-piece tape and reel.
PackageSOT-223
Current Rating-550mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQT2P25TF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 550mA |
| Current Rating | -550mA |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.8mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | -250V |
| Weight | 0.188g |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT2P25TF Datasheet
Download the complete datasheet for Onsemi FQT2P25TF to view detailed technical specifications.
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