P-channel Power MOSFET, SOT-223 package, featuring a -200V drain-source breakdown voltage and a continuous drain current of 670mA. This single-element MOSFET offers a low drain-source on-resistance of 2.7 Ohms. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay time of 8.5ns and fall time of 25ns.
PackageSOT-223
Current Rating-670mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQT3P20TF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 670mA |
| Current Rating | -670mA |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 2.7R |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.6mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | -200V |
| Weight | 0.188g |
| Width | 3.56mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT3P20TF Datasheet
Download the complete datasheet for Onsemi FQT3P20TF to view detailed technical specifications.
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