The FQT4N20TF is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 2.2W and a drain to source breakdown voltage of 200V. The device is lead free and RoHS compliant, packaged in a tape and reel with 4000 units per package.
PackageSOT-223-4
Current Rating850mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQT4N20TF technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 850mA |
| Current Rating | 850mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 7ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT4N20TF Datasheet
Download the complete datasheet for Onsemi FQT4N20TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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