N-Channel Power MOSFET, QFET™ series, featuring a 250V drain-source breakdown voltage and a maximum continuous drain current of 830mA. This surface-mount device offers a low drain-source on-resistance of 1.75Ω. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in SOT-223, this RoHS compliant component is supplied on a 4000-piece tape and reel.
PackageSOT-223
Current Rating830mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQT4N25TF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 830mA |
| Current Rating | 830mA |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.75R |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 1.75R |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.7mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.75R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 6.4ns |
| Turn-On Delay Time | 6.8ns |
| DC Rated Voltage | 250V |
| Weight | 0.188g |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT4N25TF Datasheet
Download the complete datasheet for Onsemi FQT4N25TF to view detailed technical specifications.
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