N-Channel Power MOSFET, Logic Level, QFET™ series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 1.7A. This surface-mount component in a SOT-223 package offers a maximum drain-source on-resistance of 350mΩ. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Key switching characteristics include a 9ns turn-on delay and a 50ns fall time, with an input capacitance of 290pF. RoHS compliant and lead-free.
PackageSOT-223
Current Rating1.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQT7N10LTF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.7A
Current Rating
1.7A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
350mR
Element Configuration
Single
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
6.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
350mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET™
Threshold Voltage
2V
Turn-Off Delay Time
17ns
Turn-On Delay Time
9ns
DC Rated Voltage
100V
Weight
0.188g
Width
3.56mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQT7N10LTF Datasheet
Download the complete datasheet for Onsemi FQT7N10LTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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