N-Channel Power MOSFET, QFET™ series, featuring a 100V drain-source breakdown voltage and a continuous drain current of 1.7A. This surface mount component offers a maximum drain-source on-resistance of 350mΩ. Operating within a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is housed in a SOT-223 package. Key switching characteristics include a 7ns turn-on delay and a 19ns fall time.
PackageSOT-223
Current Rating-1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQT7N10TF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.7A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 350mR |
| Element Configuration | Single |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.7mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -100V |
| Weight | 0.188g |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQT7N10TF Datasheet
Download the complete datasheet for Onsemi FQT7N10TF to view detailed technical specifications.
No datasheet is available for this part.