N-Channel MOSFET featuring 200V drain-source breakdown voltage and 9A continuous drain current. This single element transistor offers a low 280mΩ drain-source on-resistance and is packaged in a TO-251-3 (DPAK) through-hole mount. Key switching characteristics include a 13ns turn-on delay, 30ns turn-off delay, and 55ns fall time, with input capacitance at 910pF. Maximum power dissipation is rated at 55W, operating within a temperature range of -55°C to 150°C. This RoHS compliant component is supplied in a rail/tube package.
PackageTO-251-3
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU12N20TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 910pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 200V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU12N20TU Datasheet
Download the complete datasheet for Onsemi FQU12N20TU to view detailed technical specifications.
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