N-Channel Power MOSFET, logic-level gate drive, featuring a 60V drain-source breakdown voltage and 11A continuous drain current. This component offers a low on-resistance of 115mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include an 8ns turn-on delay and a 40ns fall time.
PackageTO-251-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU13N06LTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 115mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 60V |
| Weight | 0.34308g |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU13N06LTU Datasheet
Download the complete datasheet for Onsemi FQU13N06LTU to view detailed technical specifications.
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