FQU13N06LTU-WS

N-Channel Power MOSFET, Logic Level, QFET® series, featuring 60V drain-to-source breakdown voltage and 11A continuous drain current. This through-hole component offers a low 115mΩ drain-to-source resistance (Rds On Max) and is housed in a TO-251-3 (IPAK) package. Key electrical characteristics include a 350pF input capacitance, 8ns turn-on delay, and 20ns turn-off delay, with a maximum power dissipation of 28W. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.