ONSEMI

FQU13N10LTU

Datasheet

N-Channel MOSFET, 100V, 10A, 180mR, Logic Level, IPAK

Onsemi

FQU13N10LTU

Name: FQU13N10LTU Onsemi
Brand: Onsemi
SKU: FQU13N10LTU

N-Channel MOSFET, 100V, 10A, 180mR, Logic Level, IPAK

N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-source breakdown voltage and 10A continuous drain current. This component offers a low drain-source on-resistance of 180mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7.5ns turn-on delay and 22ns turn-off delay.

PackageTO-251-3

Current Rating10A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQU13N10LTU technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	10A
Current Rating	10A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	180mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	180MR
Element Configuration	Single
Fall Time	72ns
Gate to Source Voltage (Vgs)	20V
Height	6.1mm
Input Capacitance	520pF
Lead Free	Lead Free
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	70
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	180mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	2V
Turn-Off Delay Time	22ns
Turn-On Delay Time	7.5ns
DC Rated Voltage	100V
Weight	0.34308g
Width	2.3mm