
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-source breakdown voltage and 10A continuous drain current. This component offers a low drain-source on-resistance of 180mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7.5ns turn-on delay and 22ns turn-off delay.
Onsemi FQU13N10LTU technical specifications.
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