N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-source breakdown voltage and 10A continuous drain current. This component offers a low drain-source on-resistance of 180mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 7.5ns turn-on delay and 22ns turn-off delay.
PackageTO-251-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU13N10LTU technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
180MR
Element Configuration
Single
Fall Time
72ns
Gate to Source Voltage (Vgs)
20V
Height
6.1mm
Input Capacitance
520pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
70
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
2V
Turn-Off Delay Time
22ns
Turn-On Delay Time
7.5ns
DC Rated Voltage
100V
Weight
0.34308g
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQU13N10LTU Datasheet
Download the complete datasheet for Onsemi FQU13N10LTU to view detailed technical specifications.
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