N-Channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 1A continuous drain current. This component offers 20 Ohms drain-to-source resistance (Rds On Max) and a maximum power dissipation of 45W. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay, 15ns turn-off delay, and 25ns fall time.
PackageTO-251-3
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU1N80TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.85mm |
| Input Capacitance | 195pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 800V |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU1N80TU Datasheet
Download the complete datasheet for Onsemi FQU1N80TU to view detailed technical specifications.
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