ONSEMI

FQU2N100TU

N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, TO-251

Onsemi

FQU2N100TU

Name: FQU2N100TU Onsemi
Brand: Onsemi
SKU: FQU2N100TU

N-Channel MOSFET, 1kV, 1.6A, 9 Ohm, TO-251

N-Channel Power MOSFET, QFET® series, featuring a 1000V drain-source breakdown voltage and 1.6A continuous drain current. This through-hole component offers a low 9Ω maximum drain-source on-resistance and 2.5W power dissipation. Packaged in TO-251-3 (IPAK) with a 150°C maximum operating temperature, it includes fast switching characteristics with turn-on delay of 13ns and fall time of 35ns. RoHS compliant and lead-free.

PackageTO-251-3

Current Rating1.6A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQU2N100TU technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	1.6A
Current Rating	1.6A
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	7.1R
Drain to Source Voltage (Vdss)	1kV
Element Configuration	Single
Fall Time	35ns
Gate to Source Voltage (Vgs)	30V
Height	7.57mm
Input Capacitance	520pF
Lead Free	Lead Free
Length	6.8mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Through Hole
Package Quantity	70
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	9R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	25ns
Turn-On Delay Time	13ns
DC Rated Voltage	1kV
Weight	0.34308g
Width	2.5mm