N-Channel Power MOSFET, QFET® series, featuring 500V drain-source breakdown voltage and 1.6A continuous drain current. This single-element transistor offers a low 5.3Ω Rds On and is housed in a TO-251-3 (IPAK) through-hole package. Key switching characteristics include a 6ns turn-on delay and 20ns fall time, with a maximum power dissipation of 30W. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQU2N50BTU-WS technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 5.3R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 230pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 5.3R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU2N50BTU-WS Datasheet
Download the complete datasheet for Onsemi FQU2N50BTU-WS to view detailed technical specifications.
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