N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.9A continuous drain current. This single-element MOSFET offers a low 4.7 Ohm drain-source resistance (Rds On Max) and is housed in a TO-251-3 (IPAK) package for through-hole mounting. Key switching characteristics include a 9ns turn-on delay and 28ns fall time, with a maximum power dissipation of 44W. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in a rail/tube package.
PackageTO-251-3
Current Rating1.9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU2N60CTU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.1mm |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 4.7R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 600V |
| Weight | 0.34308g |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU2N60CTU Datasheet
Download the complete datasheet for Onsemi FQU2N60CTU to view detailed technical specifications.
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