N-Channel MOSFET, 600V Drain-Source Breakdown Voltage, 2.4A Continuous Drain Current, 3.6 Ohm Drain-Source Resistance. Features 30V Gate-Source Voltage, 565pF Input Capacitance, and 50W Max Power Dissipation. Packaged in TO-251-3 (IPAK) for through-hole mounting. Operates from -55°C to 150°C.
Onsemi FQU3N60CTU technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.4R |
| Reach SVHC Compliant | No |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQU3N60CTU to view detailed technical specifications.
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