ONSEMI

FQU3N60CTU

Datasheet

Onsemi

FQU3N60CTU

Name: FQU3N60CTU Onsemi
Brand: Onsemi
SKU: FQU3N60CTU

600V N-CH MOSFET, 2.4A, 3.4 Ohm, TO-251

N-Channel MOSFET, 600V Drain-Source Breakdown Voltage, 2.4A Continuous Drain Current, 3.6 Ohm Drain-Source Resistance. Features 30V Gate-Source Voltage, 565pF Input Capacitance, and 50W Max Power Dissipation. Packaged in TO-251-3 (IPAK) for through-hole mounting. Operates from -55°C to 150°C.

PackageTO-251-3

Current Rating2.4A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQU3N60CTU technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	2.4A
Current Rating	2.4A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	3.6R
Drain to Source Voltage (Vdss)	600V
Fall Time	30ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	565pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	50W
Mount	Through Hole
Package Quantity	70
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	3.4R
Reach SVHC Compliant	No
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	20ns
DC Rated Voltage	600V