The FQU4N50TU-WS is a single N-channel MOSFET with a drain to source breakdown voltage of 500V and a continuous drain current of 2.6A. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 45W. The device is packaged in a TO-251-3 through hole package and is suitable for use in a variety of applications. The FQU4N50TU-WS is a member of the QFET series from Onsemi.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQU4N50TU-WS technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 460pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.34308g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU4N50TU-WS Datasheet
Download the complete datasheet for Onsemi FQU4N50TU-WS to view detailed technical specifications.
No datasheet is available for this part.