N-Channel Power MOSFET featuring 400V drain-source breakdown voltage and 3.4A continuous drain current. This single-element transistor offers 1.6Ω drain-to-source resistance (Rds On Max) and is housed in a TO-251-3 (IPAK) package for through-hole mounting. Key switching characteristics include a 12ns turn-on delay and 30ns fall time. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 2.5W.
PackageTO-251-3
Current Rating3.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQU5N40TU technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | 3.4A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 400V |
| Element Configuration | Single |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 6.1mm |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 70 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 400V |
| Weight | 0.34308g |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQU5N40TU Datasheet
Download the complete datasheet for Onsemi FQU5N40TU to view detailed technical specifications.
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